Aluminum Nitride Sputtering Targets – AL-580
Formula: AlN^40.99

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Specifications

Purity

99.5-99.9

Particle Size

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CAS

24304-00-5

Melting Point

2200^oC / 3992^oF

Density

3.26 G/cm³

Composition

Al - 65.8 , N - 34.2

Crystal Structure

Hex

Form

Sputtering Targets

Applications

Thin Film Deposition / Optical Coatings

Mohs Hardness @ 20^oC

09-Oct

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Purity : 99.5-99.9

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Aluminum Oxide Sputtering Targets
Formula: Al₂O₃^101.96

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Specifications

Purity

99.99+

Particle Size

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CAS

1344-28-1

Melting Point

2072^oC / 3761.6^oF

Boiling Point

2980^oC / 5396^oF

Density

3.965 G/cm³

Crystal Structure

Hexagonal

Electric Resistivity

1x1022 [μΩ·cm]

Form

Sputtering Targets

Applications

Thin Film Deposition / Optical Coatings

Mohs Hardness @ 20^oC

9

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Purity : 99.99+

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Antimony Sputtering Targets – AN-180
Formula: ₅₁Sb^121.75

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Specifications

Purity

99.999%

Particle Size

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CAS

7440-36-0

Melting Point

630.5^oC / 1166.9^oF

Boiling Point

1750^oC / 3182^oF

Density

6.618 G/cm³

Coef. of Expansion @ 20^oC

8.11 μm/moK

Crystal Structure

Rhombohedral

Electric Resistivity

39.1 [μΩ·cm]

Form

Pieces

Applications

Thin Film Deposition / Optical Coatings

Mohs Hardness @ 20^oC

3.25

Cost Per Pound

Weight (lbs)

Price

1-2

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100

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Purity : 99.999%

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Bismuth Sputtering Targets
Formula: ₈₃Bi^208.98

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Specifications

Purity

99.99 - 99.999

Particle Size

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CAS

7440-69-9

Melting Point

271.3^oC / 520.34^oF

Boiling Point

1560^oC / 2840^oF

Density

9.8 G/cm³

Coef. of Expansion @ 20^oC

13.3 x 10-6

Crystal Structure

Rhombohedral

Electric Resistivity

106.8 [μΩ·cm]

Form

Sputtering Targets

Applications

Thin Film Deposition / Optical Coatings

Mohs Hardness @ 20^oC

2.5

Cost Per Pound

Weight (lbs)

Price

1-2

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Purity : 99.99 - 99.999

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Bismuth Trioxide Sputtering Target – BI-650
Formula: Bi₂O₃^465.92

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Specifications

Purity

99.99+

Particle Size

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CAS

1304-76-3

Boiling Point

1560^oC / 2840^oF

Density

8.76 G/cm³

Composition

Bi - 89.7, O - 10.3

Form

Sputtering Targets

Applications

Semiconductor

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Price

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Purity : 99.99+

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Boron Carbide Sputtering Targets
Formula: B₄C^55.26

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Specifications

Purity

99.5-99.9

Particle Size

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CAS

12069-32-8

Melting Point

2350^oC / 4262^oF

Boiling Point

3500^oC / 6332^oF

Density

2.52 G/cm³

Composition

C - 21.7, B - 78.3

Crystal Structure

Rhombohedral

Electric Resistivity

0.3-0.8 [μΩ·cm]

Form

Sputtering Targets

Applications

Thin Film Deposition / Optical Coatings

Mohs Hardness @ 20^oC

9.3

Cost Per Pound

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Price

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Purity : 99.5-99.9

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Boron Nitride Sputtering Targets
Formula: BN^24.82

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Specifications

Purity

99.5%

Particle Size

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CAS

10043-11-5

Melting Point

3000^oC / 5432^oF

Density

2.25 G/cm³

Composition

B - 43.6, N - 56.4

Crystal Structure

Hex

Form

Sputtering Targets

Applications

Thin Film Deposition / Optical Coatings

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Purity : 99.5%

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Boron Sputtering Targets
Formula: ₅B^10.811

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Specifications

Purity

99.9-99.999

Particle Size

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CAS

7440-42-8

Melting Point

2100^oC / 3812^oF

Boiling Point

2600^oC / 4712^oF

Crystal Structure

Hex

Electric Resistivity

4 x 106 [μΩ·cm]

Form

Sputtering Targets

Mohs Hardness @ 20^oC

9.3

Cost Per Pound

Weight (lbs)

Price

1-2

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Purity : 99.9-99.999

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Chromium Disilicide Sputtering Targets
Formula: CrSi₂^108.17

Product Inquiry Technical Docs

Specifications

Purity

99.5%

Particle Size

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CAS

12018-09-6

Melting Point

1490^oC / 2714^oF

Density

5.5 G/cm³

Crystal Structure

Tetrahedral

Form

Sputtering Targets

Applications

Thin Film Deposition / Optical Coatings

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Purity : 99.5%

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Chromium Sputtering Targets
Formula: ₂₄Cr^51.996

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Specifications

Purity

99.95-99.99

Particle Size

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CAS

7440-47-3

Melting Point

1875^oC / 3407^oF

Boiling Point

2475^oC / 4487^oF

Density

7.19 G/cm³

Coef. of Expansion @ 20^oC

6.2 x 10-6

Crystal Structure

Cubic, Body Centered

Electric Resistivity

12.9 [μΩ·cm]

Form

Sputtering Targets

Applications

Thin Film Deposition / Optical Coatings

Mohs Hardness @ 20^oC

9

Cost Per Pound

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Price

1-2

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Purity : 99.95-99.99

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Cobalt Oxide Sputtering Targets
Formula: Co₃O₄^240.80

Product Inquiry Technical Docs

Specifications

Purity

99.95%

Particle Size

2-3" diameter x 0.125-0.25" thick

CAS

1308-06-1

Melting Point

1795^oC / 3263^oF

Density

6.45 G/cm³

Composition

Co - 73.4, O - 26.6

Crystal Structure

Cubic

Form

Sputtering Targets

Applications

Thin Film Deposition / Optical Coatings

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Purity : 99.95%

Particle Size : 2-3" diameter x 0.125-0.25" thick
Cobalt Sputtering Targets
Formula: ₂₇Co^58.933

Product Inquiry Technical Docs

Specifications

Purity

99.95-99.99

Particle Size

inquire

CAS

7440-48-4

Melting Point

1495^oC / 2723^oF

Boiling Point

2900^oC / 5252^oF

Density

8.92 G/cm³

Coef. of Expansion @ 20^oC

12.5 x 10-6

Crystal Structure

Hex

Electric Resistivity

6.24 [μΩ·cm]

Form

Sputtering Targets

Applications

Thin Film Deposition / Optical Coatings

Notes

Vickers Hardness at 20 degrees C is 253

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Purity : 99.95-99.99

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